BUZ72AL中文资料

SIPMOS ? Power Transistor

? N channel

? Enhancement mode ? Avalanche-rated ? Logic Level

Pin 1Pin 2Pin 3

G

D

S

Type

V DS I D R DS(on )Package

Ordering Code

BUZ 72 AL

100 V

9 A

0.25 ?

TO-220 AB

C67078-S1327-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current T C = 25 ?C

I D

9

A

Pulsed drain current T C = 25 ?C

I Dpuls

36

Avalanche current,limited by T jmax

I AR 10Avalanche energy,periodic limited by T jmax E AR 7.9

mJ

Avalanche energy, single pulse I D = 10 A, V DD = 25 V, R GS = 25 ?L = 885 μH, T j = 25 ?C

E AS

59

Gate source voltage

V GS ± 20

V

ESD-Sensitivity HBM as per MIL-STD 883Class 1

Power dissipation T C = 25 ?C

P tot

40

W

Operating temperature T j -55 ... + 150?C

Storage temperature

T stg -55 ... + 150

Thermal resistance, chip case R thJC ≤ 3.1

K/W

Thermal resistance, chip to ambient R thJA

75DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1

55 / 150 / 56

BUZ 72AL

Electrical Characteristics, at T j = 25?C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Static Characteristics

Drain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 ?C V(BR)DSS

100--

V

Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)

1.2 1.6 2

Zero gate voltage drain current

V DS = 100 V, V GS = 0 V, T j = 25 ?C V DS = 100 V, V GS = 0 V, T j = 125 ?C I DSS

-

-

10

0.1

100

1

μA

Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS

- 10 100

nA

Drain-Source on-resistance V GS = 5 V, I D = 5 A R DS(on)

- 0.15 0.25

?

Electrical Characteristics, at T j = 25?C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Dynamic Characteristics

Transconductance

V DS≥ 2 *I D * R DS(on)max, I D = 5 A g fs

5 7.5-

S

Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

- 680 900

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

- 180 250

Reverse transfer capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

- 90 150

Turn-on delay time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t d(on)

- 20 30

ns

Rise time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t r

- 85 130

Turn-off delay time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t d(off)

- 100 130

Fall time

V DD = 30 V, V GS = 5 V, I D = 3 A R GS = 50 ?t f

- 55 70

Electrical Characteristics, at T j = 25?C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Reverse Diode

Inverse diode continuous forward current T C = 25 ?C I S

-- 9

A

Inverse diode direct current,pulsed T C = 25 ?C I SM

-- 36

Inverse diode forward voltage V GS = 0 V, I F = 20 A V SD

- 1.2 1.5

V

Reverse recovery time

V R = 30 V, I F=l S, d i F/d t = 100 A/μs t rr

- 180-

ns

Reverse recovery charge

V R = 30 V, I F=l S, d i F/d t = 100 A/μs Q rr

- 460-

nC

Power dissipation P tot = ?(T C )

20406080

100120?C 160T C 0 5 10 15 20

25

30 35 W

45 P tot

Drain current I D = ?(T C )

parameter: V GS ≥ 5 V

20406080100

120?C 160

T C

0 1 2 3 4

5

6 7 8 A

10 I

D

Safe operating area I D = ?(V DS )

parameter: D = 0.01, T C = 25?C

-1

10 0

10 1

10 2

10 A

I D

10

0 10

1

10

2

V V DS

R

D S (o n ) = V

D S / I

D DC

10 ms

1 ms

100 μs

t p

= 36.0μs Transient thermal impedance

Z th JC = ?(t p )

parameter: D = t p / T

-3

10 -2

10 -1

10 0

10 1 10 K/W

Z thJC

10

-7 10

-6

10

-5

10

-4

10

-3

10

-2

10 -1 10

s t p

single pulse

0.01

0.02

0.050.10

0.20D = 0.50

Typ. output characteristics I D = ?(V DS )

parameter: t p = 80 μs

0.0

1.0

2.0

3.0

4.0

5.0

V 7.0

V DS 0 2 4 6 8 10 12 14 16 A

20 I D

V GS [V]

a a

2.0b

b

2.5c c

3.0d d 3.5e

e 4.0

f f 4.5g

g 5.0h

h

5.5i i

6.0j j

7.0k k

8.0l P tot = 40W

l

10.0

Typ. drain-source on-resistance R DS (on) = ?(I D )parameter: V GS

2468101214A 17

I D

0.00

0.10 0.20

0.30

0.40

0.50

0.60

?

0.80

R DS (on)

2.02.5

V GS [V] =

a a 3.0

b b

3.5

c c 4.0

d

d 4.5

e e 5.0

f f 5.5

g g 6.0

h

h 7.0i i 8.0j j 10.0

Typ. transfer characteristics I D = f

(V GS )parameter: t p = 80 μs V DS ≥2 x I D x R DS(on)max

12345678V

10

V GS

0 2 4 6 8 10 12 14 16 18 20 22 24 26

A

30 I D

Typ. forward transconductance g fs = f (I D )

parameter: t p = 80 μs,V DS ≥2 x I D x R DS(on)max

48121620A

28

I D

0 1

2 3 4 5 6 7 8 9 10

S 12 g fs

Drain-source on-resistance R DS (on) = ?(T j )

parameter: I D = 5 A, V GS = 5 V

-60

-20

20

60

100

?C

160

T j 0.00 0.10

0.20

0.30

0.40

0.50

0.60

?

0.80

R DS (on)

typ

98%

Gate threshold voltage V GS (th) = ?(T j )

parameter: V GS =

V DS , I D = 1 mA

0.0 0.4

0.8

1.2 1.6

2.0 2.4

2.8

3.2

3.6

4.0

V 4.6 V GS(th)

-60

-20

20

60

100

?C

160

T j

2%

typ

98%Typ. capacitances

C = f (V DS )

parameter:V GS = 0V, f = 1MHz

51015202530V

40

V DS

-1

10

10 1

10 2

10 nF

C

C rss

C oss C iss

Forward characteristics of reverse diode I F = ?(V SD )

parameter: T j , t p = 80 μs

-1

10 0

10 1

10 2

10 A

I F

0.0

0.40.8 1.2 1.6 2.0 2.4V 3.0

V SD

T j = 25 ?C typ T j = 25 ?C (98%)T j = 150 ?C typ T j = 150 ?C (98%)

Avalanche energy E AS = ?(T j )parameter: I D = 10 A, V DD = 25 V R GS = 25 ?, L = 885 μH

20

40

60

80

100

120

?C

160

T j 0 5 10

15 20 25

30 35 40

45 50

mJ

60 E AS

Typ. gate charge V GS = ?(Q Gate )

parameter: I D puls = 15 A

10

20

30

40

nC

55

Q Gate

0 2

4 6

8

10

12

V

16

V GS

DS max

V 0,8 DS max

V 0,2 Drain-source breakdown voltage V (BR)DSS = ?(T j )

-60

-202060100?C 160

T

j

90 92

94 96 98 100 102 104 106 108 110 112 114

116

V 120 V (BR)DSS