IRGP4063DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE IRGP4063DPbF
PD - 97210
V CES = 600V I C = 48A, T C = 100°C
t SC ≥ 5μs, T J(max) = 175°C
V CE(on) typ. = 1.65V
Features
?Low V CE (ON) Trench IGBT Technology ?Low switching losses
?Maximum Junction temperature 175 °C ? 5 μS short circuit SOA ?Square RBSOA
?100% of the parts tested for 4X rated current (I LM )?Positive V CE (ON) Temperature co-efficient ?Ultra fast soft Recovery Co-Pak Diode ?Tight parameter distribution ?
Lead Free Package
Benefits
?High Efficiency in a wide range of applications
?Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses
?Rugged transient Performance for increased reliability ?Excellent Current sharing in parallel operation ?Low EMI
G
C E TO-247AC
C
IRGP4063DPbF
Notes:
V CC = 80% (V CES ), V GE = 20V, L = 200μH, R G = 10?. This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V (BR)CES safely.
IRGP4063DPbF
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T C = 25°C, T J ≤ 175°C; V GE =15V
Fig. 4 - Reverse Bias SOA T J = 175°C; V GE =15V
Fig. 5 - Typ. IGBT Output Characteristics
T J = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
T J = 25°C; tp = 80μs
0246810
V CE (V)
20406080100120140160180200I C E (A )
2
4
6
810 V CE (V)020406080100120140
160180200I C E (A )
25
50
75
100125150175200 T C (°C)
010203040506070
8090
100I C (A )
25
50
75
100125150175200 T C (°C)
050100150200250
300350P
t o t (W )
10
1001000
V CE (V)
I C (A )
1
10
100
1000
V CE (V)
0.1
1
10
100
1000
I C (A
)
IRGP4063DPbF
Fig. 10 - Typical V CE vs. V GE
T J = 25°C
Fig. 11 - Typical V CE vs. V GE
T J = 175°C Fig. 12 - Typ. Transfer Characteristics
V CE = 50V; tp = 10μs
020406080
100120140
160180200I C E (A )
020406080100120
140160180200I F (A )
5
10
1520024681012
14
161820V C E (V )
510
1520
V GE (V)
2468101214
161820V C E (V )
5
10
1520 V GE (V)
02468101214161820V C E (V )
05
1015
V GE (V)
20406080100120140
160180200I C E (A )
IRGP4063DPbF
Fig. 13 - Typ. Energy Loss vs. I C
T J = 175°C; L = 200μH; V CE = 400V, R G = 10?; V GE = 15V
Fig. 14 - Typ. Switching Time vs. I C
T J = 175°C; L = 200μH; V CE = 400V, R G = 10?; V GE = 15V
Fig. 15 - Typ. Energy Loss vs. R G
T J = 175°C; L = 200μH; V CE = 400V, I CE = 48A; V GE = 15V
Fig. 16 - Typ. Switching Time vs. R G
T J = 175°C; L = 200μH; V CE = 400V, I CE = 48A; V GE = 15V
Fig. 17 - Typ. Diode I RR vs. I F
T J = 175°C Fig. 18 - Typ. Diode I RR vs. R G
T J = 175°C
020*********
I C (A)
10
100
1000
S w i c h i n g T i m e (n s )
25
50
75
100
125
Rg (?)
1000
150020002500300035004000
45005000E n e r g y
(μJ )
0255075100125
R G (?)
10
100
1000
S w i c h i n g T i m e (n s )
20
406080100I F (A)
051015202530354045I R R (A )
0255075100125
R G (?)
10
15202530354045
I R R (A )
50
100
150
I C (A)
1000
200030004000
5000
6000E n e r g y (μJ )
IRGP4063DPbF
Fig. 19 - Typ. Diode I RR vs. di F /dt
V CC = 400V; V GE = 15V; I F = 48A; T J = 175°C
Fig. 20 - Typ. Diode Q RR vs. di F /dt V CC = 400V; V GE = 15V; T J = 175°C
Fig. 23 - Typ. Capacitance vs. V CE
V GE = 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. V GE
I CE = 48A; L = 600μH
Fig. 21 - Typ. Diode E RR vs. I F
T J = 175°C
Fig. 22 - V GE vs. Short Circuit Time
V CC = 400V; T C = 25°C
200
400
600
800
1000
di F /dt (A/μs)
10
1520253035
4045I R R (A
)
20
4060
80
100
I F (A)
0100200300400500600
700800900E n e r g y (μJ )
8
10
12
14
16
18
V GE (V)
468
1012141618T i m e (μs )
50
100150200250300
350400Current (A)
20
40
60
80
100
V CE (V)
10
100
1000
10000
C a p a c i t a n c e (p F )
025*******
Q G , Total Gate Charge (nC)
246810121416V G E , G a t e -t o -
E m i t t e r V o l t a g e (V )
050010001500
di F /dt (A/μs)
1000
15002000250030003500
4000Q R R (μC
)
IRGP4063DPbF
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
IRGP4063DPbF
C
L
Fig.C.T.1 - Gate Charge Circuit (turn-off)Fig.C.T.2 - RBSOA Circuit
IRGP4063DPbF
Fig. WF3 - Typ. Diode Recovery Waveform
@ T J = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T J = 175°C using Fig. CT.4Fig. WF2 - Typ. Turn-on Loss Waveform
@ T J = 175°C using Fig. CT.4
@ T J = 25°C using Fig. CT.3
Qualification Standards can be found on IR’s Web site. 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at https://www.wendangku.net/doc/e112445941.html, for sales contact information. 05/06
Note: For the most current drawings please refer to the IR website at:
https://www.wendangku.net/doc/e112445941.html,/package/