功率MOS段·管IXFH12N90P

DSS I D25

= 12A

R DS(on)≤ 900m

Ωt rr

≤ 300ns

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Features

z International standard packages z Avalanche Rated

z Low package inductance z

Fast intrinsic diode

Advantages

z Easy to mount z Space savings z

High power density

Applications:

z Switched-mode and resonant-mode power supplies z DC-DC Converters z Laser Drivers

z AC and DC motor drives z

Robotics and servo controls

Symbol Test Conditions Maximum Ratings

V DSS T J = 25°C to 150°C

900V V DGR T J = 25°C to 150°C, R GS = 1M Ω900V V GSS Continuous ± 30V V GSM Transient ± 40V I D25T C = 25°C

12A I DM T C = 25°C, pulse width limited by T JM 24A I A T C = 25°C 6A E AS T C = 25°C

500mJ dV/dt I S ≤ I DM , V DD ≤ V DSS ,T J ≤ 150°C 15V/ns P D T C = 25°C

380

W T J -55 ... +150

°C T JM 150

°C T stg -55 ... +150

°C T L Maximum lead temperature for soldering 300°C T SOLD Plastic body for 10s 260

°C M d Mounting torque (TO-247)

1.13/10

Nm/lb.in.

F C

Mounting force (PLUS220) 11..65/2.5..14.6N/lb.

Weight

TO-247

6g PLUS220 types

4 g

IXFV12N90P IXFV12N90PS

Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max.BV DSS V GS = 0V, I D = 1mA 900

V V GS(th)V DS = V GS , I D = 1mA 3.5 6.5

V I GSS V GS = ± 30V, V DS = 0V ± 100

nA

I DSS V DS = V DSS

25μA V GS = 0V

T J = 125°C

1 mA R DS(on)

V GS = 10V, I D = 0.5 ? I D25, Note 1

900

m Ω

Polar TM Power MOSFET HiPerFET TM

G = Gate D = Drain S = Source TAB = Drain

G

S

D (TAB)

PLUS220SMD (IXFV_S)

TO-247 (IXFH)

PLUS220 (IXFV)

G

D

S

D (TAB)

D (TAB)

TO-247 (IXFH) Outline PLUS220SMD (IXFV_S) Outline

PRELIMINARY TECHNICAL INFORMATION

IXYS reserves the right to change limits, test conditions, and dimensions.