文档库 最新最全的文档下载
当前位置:文档库 › MJE2955T详细手册

MJE2955T详细手册

MJE2955T详细手册
MJE2955T详细手册

1

Complementary Silicon Plastic Power Transistors

...designed for use in general–purpose amplifier and switching applications.?DC Current Gain Specified to 10 Amperes ?High Current Gain — Bandwidth Product —

f T = 2.0 MHz (Min) @ I C = 500 mAdc

10

Figure 1. Active–Region Safe Operating Area

V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.02.01.00.20.1I C , C O L L E C T O R C U R R E N T (A M P )

0.57.03.00.70.3There are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation;i.e., the transistor must not be subjected to greater dissipa-tion than the curves indicate.

The data of Figure 1 is based on T J(pk) = 150_C. T C is vari-able depending on conditions. Second breakdown pulse lim-its are valid for duty cycles to 10% provided T J(pk) v 150_C.At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE2955T/D

MJE2955T MJE3055T

4

Motorola Bipolar Power Transistor Device Data

How to reach us:

USA /EUROPE : Motorola Literature Distribution;

JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki,

P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315MFAX : RMFAX0@https://www.wendangku.net/doc/eb14065972.html, – TOUCHTONE (602) 244–6609HONG KONG : Motorola Semiconductors H.K. Ltd.; 8B T ai Ping Industrial Park, INTERNET : http://Design–NET .com

51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298

?

相关文档