C1601中文资料

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? IMP , Inc.ISO 9001 Registered

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Process C1601

CMOS 1.6μm

Analog Mixed Mode

Electrical Characteristics

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Process C1601

Physical Characteristics

Starting Material P <100>N+/P+ Width/Space 1.6 / 3.2μm

Starting Mat. Resistivity15 - 25 ?-cm N+ To P+ Space 8.0μm

Typ. Operating Voltage5V Contact To Poly Space 1.5μm

Well Type N-well Contact Overlap Of Diffusion0.8μm

Metal Layers2Contact Overlap Of Poly0.8μm

Poly Layers2Metal-1 Overlap Of Contact 1.0μm

Contact Size 1.5x1.5μm Metal-1 Overlap Of Via 1.0μm

Via Size 1.5x1.5μm Metal-2 Overlap Of Via 1.2μm

Metal-1 Width/Space 2.0 / 2.0μm Minimum Pad Opening65x65μm

Metal-2 Width/Space 3.2 / 2.3μm Minimum Pad-to-Pad Spacing 5.0μm

Gate Poly Width/Space 1.6 / 1.7μm Minimum Pad Pitch80.0μm

Special Feature of C1601 Process: 2.0 μm Analog process with n- and p-channel transistors

in CMOS 1.5 μm technology.

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