BD236中文资料
BD235/BD236BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235and BD237are silicon epitaxial-base NPN power transistors in Jedec SOT-32plastic package inteded for use in medium power linear and switching applications.
The complementary PNP types are BD236and BD238respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1997ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN BD235BD237PNP
BD236BD238V CBO Collector-Base Voltage (I E =0)60100V V CER Collector-Base Voltage (R BE =1K ?)60100V V CEO Collector-Emitter Voltage (I B =0)60
80
V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current 2A I CM Collector Peak Current 6A P t ot Total Dissipation at T c =25o
C 25W
T stg Storage Temperature
-65to 150
o C T j
Max.Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
1/5
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max5o C/W ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)
Symbol Parameter Test Conditions Min.Typ.Max.Unit
I CBO Collector Cut-off
Current(I E=0)V CE=rated V CEO
V CE=rated V CEO T c=150o C
0.1
2
mA
mA
I EBO Emitter Cut-off Current
(I C=0)
V EB=5V1mA
V CEO(sus)?Collector-Emitter
Sustaining Voltage I C=100mA
for BD235/BD236
for BD237/BD238
60
80
V
V
V CE(sat)?Collector-Emitter
Saturation Voltage
I C=1A I B=0.1A0.6V V BE?Base-Emitter Voltage I C=1A V CE=2V 1.3V
h FE?DC Current Gain I C=150mA V CE=2V
I C=1A V CE=2V 40 25
f T Transition frequency I C=250mA V CE=10V3MHz h FE1/h FE2?Matched Pairs I C=150mA V CE=2V 1.6
? Pulsed:Pulse duration=300μs,duty cycle1.5%
Safe Operating Area Derating Curves
BD235/BD236/BD237/BD238
2/5
DC Current Gain(NPN type)
Collector-Emitter Saturation Voltage(NPN type) Base-Emitter Saturation Voltage(NPN type)DC Current Gain(PNP type)
Collector-Emitter Saturation Voltage(PNP type) Collector-Base Capacitance(PNP type)
BD235/BD236/BD237/BD238
3/5
DIM.
mm inch MIN.
TYP.
MAX.MIN.TYP.
MAX.A 7.47.80.2910.307B 10.510.80.4130.445b 0.70.90.0280.035b10.490.750.0190.030C 2.4 2.70.0400.106c1 1.0 1.30.0390.050D 15.4
16.0
0.606
0.629
e 2.2
0.087
e3 4.15
4.65
0.163
0.183
F 3.8
0.150
G 3 3.20.118
0.126H 2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32(TO-126)MECHANICAL DATA
BD235/BD236/BD237/BD238
4/5
BD235/BD236/BD237/BD238 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice.This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
?1997SGS-THOMSON Microelectronics-Printed in Italy-All Rights Reserved
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