IDT74541APG中文资料
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES:
?0.5 MICRON CMOS Technology
?ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)?V CC = 3.3V ± 0.3V, Normal Range ?V CC = 2.7V to 3.6V, Extended Range ?CMOS power levels (0.4μ W typ. static)
?Rail-to-rail output swing for increased noise margin ?All inputs, outputs, and I/O are 5V tolerant ?Supports hot insertion
?Available in SOIC, SSOP, QSOP, and TSSOP packages
FUNCTIONAL BLOCK DIAGRAM
APPLICATIONS:
?5V and 3.3V mixed voltage systems
?Data communication and telecommunication systems
DRIVE FEATURES:
?High Output Drivers: ±24mA ?Reduced system switching noise
IDT74LVC541A
DESCRIPTION:
The LVC541A octal buffer/driver is built using advanced dual metal CMOS technology. This device is ideal for driving bus lines or buffer memory address registers. This device features inputs and outputs on opposite sides of the package that facilitate printed circuit board layout. The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output enable (OE 1 or OE 2) input is high, all eight outputs are in the high-impedance state.The LVC541A has been designed with a ±24mA output driver. This driver is capable of driving a moderate to heavy load while maintaining speed performance.
To ensure the high-impedance state during power up or power down, OE should be tied to V
CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
Inputs can be driven from either 3.3V or 5V devices. This feature allows the use of this device as a translator in a mixed 3.3V/5V system environment.
3.3V CMOS OCTAL BUFFER/DRIVER
WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
NOTE:
1.As applicable to the device type.
Symbol Parameter (1)Conditions Typ.Max.Unit C IN Input Capacitance V IN = 0V 4.56pF C OUT Output Capacitance V OUT = 0V 5.58pF C I/O
I/O Port Capacitance
V IN = 0V
6.5
8
pF
CAPACITANCE (T A = +25°C, F = 1.0MHz)
Symbol Description
Max Unit V TERM Terminal Voltage with Respect to GND –0.5 to +6.5V T STG Storage Temperature –65 to +150°C I OUT DC Output Current –50 to +50mA I IK Continuous Clamp Current,–50mA I OK V I < 0 or V O < 0
I CC Continuous Current through each ±100
mA
I SS
V CC or GND
ABSOLUTE MAXIMUM RATINGS (1)
NOTE:
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
SOIC/ SSOP/ QSOP/ TSSOP
TOP VIEW
NOTE:
1.H = HIGH Voltage Level X = Don’t Care
L = LOW Voltage Level Z = High-Impedance
Inputs
Outputs
OE 1OE 2xAx xYx L L L L L L H H H X X Z X
H
X
Z
FUNCTION TABLE (1)
Pin Names Description OE 1, OE 2
Output Enable Inputs (Active LOW)A x Data Inputs Y x
Data Outputs
PIN DESCRIPTION
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
Symbol Parameter Test Conditions Min.Typ.(1)Max.Unit V IH Input HIGH Voltage Level V CC = 2.3V to 2.7V 1.7——V
V CC = 2.7V to 3.6V 2——V IL Input LOW Voltage Level V CC = 2.3V to 2.7V ——0.7V V CC = 2.7V to 3.6V ——0.8I IH Input Leakage Current
V CC = 3.6V
V I = 0 to 5.5V
—
—
±5
μA I IL I OZH High Impedance Output Current V CC = 3.6V
V O = 0 to 5.5V
—
—
±10
μA
I OZL (3-State Output pins)
I OFF Input/Output Power Off Leakage V CC = 0V, V IN or V O ≤ 5.5V ——±50μA V IK Clamp Diode Voltage
V CC = 2.3V, I IN = –18mA —–0.7–1.2V V H Input Hysteresis
V CC = 3.3V —100—mV I CCL Quiescent Power Supply Current
V CC
= 3.6V
V IN = GND or V CC
——10μA
I CCH I CCZ 3.6 ≤ V IN ≤ 5.5V (2)
——10?I CC
Quiescent Power Supply Current One input at V CC - 0.6V, other inputs at V CC or GND
—
—
500
μA
Variation
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:Operating Condition: T A = –40°C to +85°C
NOTES:
1.Typical values are at V CC = 3.3V, +25°C ambient.
2.This applies in the disabled state only.
NOTE:
1.V IH and V IL must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate V CC range.
T A = – 40°C to + 85°C.
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
OPERATING CHARACTERISTICS, V CC = 3.3V ± 0.3V , T A = 25°C
SWITCHING CHARACTERISTICS (1)
V CC = 2.7V
V CC = 3.3V ± 0.3V Symbol Parameter Min.
Max.Min.Max.Unit t PLH Propagation Delay — 5.6 1.5 5.1ns t PHL Ax to Yx t PZH Output Enable T ime —7.5 1.57ns t PZL OE x to Yx t PHZ Output Disable Time —7.7
1.5
7ns t PLZ OE x to Yx t SK (o)
Output Skew (2)
—
——
1
ns
NOTES:
1.See TEST CIRCUITS AND WAVEFORMS. T A = – 40°C to + 85°C.
2.Skew between any two outputs of the same package and switching in the same direction.
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL T EMPERATURE R ANGE
IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
ORDERING INFORMATION
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