SI3586DV中文资料

FEATURES

D TrenchFET r Power MOSFET D Fast Switching In Small Footprint

D Very Low r DS(on) for Increased Efficiency

APPLICATIONS

D Load Switch for Portable Devices

Vishay Siliconix

New Product

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V)

r DS(on) (W )

I D

(A)

0.060 @ V GS = 4.5 V 3.4N-Channel

20

0.070 @ V GS = 2.5 V

3.20.100 @ V GS = 1.8 V 2.50.110 @ V GS = ?

4.5 V ?2.5

P-Channel ?20

0.145 @ V GS = ?2.5 V ?2.00.220 @ V GS = ?1.8 V

?1.0

D G 1

1

N-Channel MOSFET

S G 2

2

P-Channel MOSFET

TSOP-6Top View

D2

S1

D1

Ordering Information: Si3586DV-T1—E3

ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel Parameter

Symbol

5 secs Steady State

5 secs

Steady State

Unit

Drain-Source Voltage V DS 20

?20

Gate-Source Voltage

V GS "8

V

T A = 25_C 3.4 2.9?2.5?2.1Continuous Drain Current (T J = 150_C)a T A = 70_C

I D 2.7

2.3

?2.0

?1.7

Pulsed Drain Current

I DM "8

A

Continuous Source Current (Diode Conduction)a I S 1.050.75?1.05?0.75Maximum Power Dissipation T A = 25_C 1.150.83 1.150.83a

T A = 70_C P D 0.73

0.53

0.73

0.53

W Operating Junction and Storage Temperature Range

T J , T stg

?55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical

Maximum

Unit

M i

J ti t A bi t t v 5 sec 93110Maximum Junction-to-Ambient a Steady State R thJA 130150_Maximum Junction-to-Foot (Drain)Steady State

R thJF

90

90

C/W

Notes

a.Surface Mounted on 1” x 1” FR4 Board.

Vishay Siliconix

New Product

SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol Test Condition Min Typ Max Unit

Static

V DS = V GS , I D = 250 m A N-Ch 0.40 1.1Gate Threshold Voltage

V GS(th)

V DS = V GS , I D = ?250 m A P-Ch ?0.40

?1.1V

Gate Body Leakage V DS = 0 V, V GS = "8 V N-Ch "100Gate-Body Leakage

I GSS

V DS = 0 V, V GS = "8 V P-Ch "100nA

V DS = 16 V, V GS = 0 V

N-Ch 1V DS = ?16 V, V GS = 0 V P-Ch ?1Zero Gate Voltage Drain Current

I DSS

V DS = 16 V, V GS = 0 V, T J = 85_C N-Ch 10m A V DS = ?16 V, V GS = 0 V, T J = 85_C

P-Ch ?10

On State Drain Current D()

V DS w 5 V, V GS = 4.5 V N-Ch 5On-State Drain Current a

I D(on)V DS p ?5 V, V GS = ?4.5 V P-Ch ?5

A V GS = 4.5 V, I D = 3.4 A N-Ch 0.0470.060V GS = ?4.5 V, I D = ?2.5 A

P-Ch 0.0860.110Drain Source On State Resistance DS()

V GS = 2.5 V, I D = 3.2 A N-Ch 0.0540.070Drain-Source On-State Resistance a

r DS(on)V GS = ?2.5 V, I D = ?2.0 A P-Ch 0.1160.145W

V GS = ?1.8 V, I D = ?2.5 A N-Ch 0.0750.100V GS = ?1.8 V, I D = ?1.0 A

P-Ch 0.1700.220

Forward Transconductance f V DS = 5 V, I D = 3.4 A N-Ch 13a

g fs V DS = ?5 V, I D = ?2.5 A P-Ch 6S Diode Forward Voltage I S = 1.05 A, V GS = 0 V N-Ch 0.8 1.1a V SD

I S = ?1.05 A, V GS = 0 V

P-Ch

?0.8

?1.1V

Dynamic b

N-Ch 4.1 6.0Total Gate Charge

Q g

N-Channel

P-Ch 57.5

Gate Source Charge V DS = 10 V, V GS = 4.5 V, I D = 3.4 A N-Ch 0.65Gate-Source Charge

Q gs P-Channel

10 V 45 V I 25 A

P-Ch 0.68nC

Gate Drain Charge d V DS = ?10 V, V GS = ?4.5 V, I D = ?2.5 A N-Ch 0.8Gate-Drain Charge

Q gd P-Ch 1.3N-Ch 2.6Gate Resistance

R g P-Ch 9.8W

Turn On Delay Time d()N-Ch 3045Turn-On Delay Time

t d(on)P-Ch

2845N-hannel

V N-Ch 5285Rise Time

t r DD = 10 V, R L = 10 W

I D ^ 1 A, V GEN = 4.5 V, R G = 6 W P-Ch 5585Turn Off Delay Time d(ff)P-Channel 10 V R 10 W

N-Ch 2540Turn-Off Delay Time

t d(off)V DD = ?10 V, R L = 10 ??4.5 V, R P-Ch 5585ns I D ^ 1 A, V GEN = G = 6 W

N-Ch 2030Fall Time

t f P-Ch

3250Source-Drain

I F = 1.05 A, di/dt = 100 A/m s N-Ch 2540Reverse Recovery Time

t rr

I F = ?1.05 A, di/dt = 100 A/m s

P-Ch

25

40

Notes

a.Pulse test; pulse width v 300 m s, duty cycle v 2%.

b.Guaranteed by design, not subject to production testing.

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New Product

? O

n -R e s i

s t a n c e (0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

1

2

3

4

5

01234560

1

2

3456

?50

?250255075100125150

0.00

0.02

0.04

0.06

0.08

0.10

1

2

3

4

5

6

7

8

100200300400500

6000

4

8

12

16

20

Gate Charge

On-Resistance vs. Drain Current

V DS ? Drain-to-Source Voltage (V)

V GS ? Gate-to-Source Voltage (V)

? G a t e -t o -S o u r c e V o l t a g e (V )

Q g ? Total Gate Charge (nC)V DS ? Drain-to-Source Voltage (V)

C ? C a p a c i t a n c e (p F )

V G S r D S (o n )W )

I D ? Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

T J ? Junction Temperature (_C)

(N o r m a l i z e d )

? O n -R e s i s t a n c e (r D S (o n )W )

N?CHANNEL

0.01

1

10

30

0.1

Single Pulse Power (Junction-to-Ambient)

Time (sec)

?50

?250255075100125150

4

5

T J ?

Temperature (_C)

On-Resistance vs. Gate-to-Source Voltage

Gate-to-Source Voltage (V)

Safe Operating Area, Junction-to-Case

V DS ? Drain-to-Source Voltage (V)

0.1

1

10

100

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N?CHANNEL

10?3

10?21

10

10?110?4

21

0.1

0.01

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

21

0.1

0.01

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P?CHANNEL

0123456

78

0.00

0.15

0.30

0.450.60

0.75

1

2

3

4

5

6

7

8

0130

260

390

520

650

4

8

12

16

20

0123456

780.0

0.5 1.0 1.5 2.0 2.5

? D r a i n C u

r r e n t (A )

I D V GS ? Gate-to-Source Voltage (V)

? D r a i n C u r r e n t (A )

I D V DS ? Drain-to-Source Voltage (V)

C ? C a p a

c i t a n c e (p F )

? O n -R e s i s t a n c e (r D S (o n )W )

I D ? Drain Current (A)

Capacitance

0.0

1.3

2.6

3.9

5.2

6.5

1

2

3

4

5

6

?50

?250255075100125150

Gate Charge

? G a t e -t o -S o u r c e V o l t a g e (V )

Q g ? Total Gate Charge (nC)

V G S On-Resistance vs. Junction Temperature

T J ? Junction Temperature (_C)

(N o r m a l i z e d )

? O n -R e s i s t a n c e (r D S (o n )W )

T J? Temperature (_C)

0.0111030

0.1

Time (sec)

Safe Operating Area, Junction-to-Case

V DS? Drain-to-Source Voltage (V)

0.1110100

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P?CHANNEL

10?3

10?21

10

10?110?4

21

0.1

0.01

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

21

0.1

0.01