STV9378 VERTICAL DEFLECTION BOOSTER
July1994
ADVANCE DATA
Output Stage Supply
Output
GND
Flyback Generator
Supply Voltage
Inverting Input
Tab connected to pin4
7
6
5
4
3
2
1
Non-inverting Input and Reference Voltage
9
3
7
8
-
1
.
E
P
S
PIN CONNECTIONS
HEPTAWATT
(Plastic Package) ORDER CODE:STV9378
.POWER AMPLIFIER
.FLYBACK GENERATOR
.THERMAL PROTECTION
.OUTPUT CURRENT UP TO2.0A PP
.FLYBACK VOLTAGE UP TO90V(on Pin5)
.INTERNAL REFERENCE VOLTAGE
DESCRIPTION
Designed for monitors and high performance TVs,
the STV9378vertical deflection booster delivers
flyback voltages up to90V.
The STV9378operateswith supplies up to42V and
provides up to2App output current to drive the
yoke.
The STV9378is offered in HEPTAWATT package.
This is advance information on a new product now in development or undergoing evaluation.Details are subject to change without notice.
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POWER AMPLIFIER
457THER MAL PROTECTION
1
REFERENCE VOLTAGE 2
3
6
FLYBACK GENERATOR
FLYBACK GENERATOR
OUTPUT
GROUND
NON-INVERTING INPUT OR REFERENCE VOLTAGE
INVERTING INPUT
OUTPUT
STAGE SUPPLY
SUPPLY VOLTAGE 10k ?
9378-02.E P S
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Value Unit V S Supply Voltage (Pin 2)(see note 1)50V V 6Flyback Peak Voltage (Pin 6)(see note 1)100V V 1,V 7Amplifier Input Voltage (Pins 1-7)(see note 1)-0.3,+V S
V I O Maximum Output Peak Current (see notes 2and 3) 1.5A I 3Maximum Sink Current (first part of flyback)(t <1ms) 1.5A I 3Maximum Source Current (t <1ms) 1.5A
T oper Operating Ambient Temperature -20,+75o C
T stg Storage Temperature -40,+150o C T j
Junction Temperature
+150
o
C
9378-01.T B L
Notes :
1.Versus GND.
2.The output current can reach 4A peak for t ≤10μs (up to 120Hz).
3.
Provided SOAR is respected (see Figures 1and 2).
THERMAL DATA
Symbol Parameter
Value Unit
R th (j-c)Junction-case Thermal Resistance Max.
3o
C/W
T t Temperature for Thermal Shutdown 150o C
?T t Hysteresis on T t
10o C T jr
Recommended Max.Junction Temperature
120
o
C
9378-02.T B L
STV9378
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ELECTRICAL CHARACTERISTICS
(V S =42V,T A =25o C,unless otherwise specified)
Symbol Parameter
Test Conditions
Min.Typ.
Max.Unit V S Operating Supply Voltage Range 10
42V I 2Pin 2Quiescent Current I 3=0,I 5=01020mA I 6Pin 6Quiescent Current I 3=0,I 5=0
5
1030mA I O Max.Peak Output Current 1A I 1Amplifier Bias Current V 1=1V
-0.15-1μA V 7Internal Reference Voltage 2.2
2.3 2.4V ?V 7?V S Reference Voltage Drift versus V S V S =24to 42V 24mV/V Kt Reference Voltage Drift versus T j 100
150
ppm/o C GV Voltage Gain
80
dB V 5L Output Saturation Voltage to GND (Pin 4)I 5=1A 1 1.5V V 5H Output Saturation Voltage to Supply (Pin 6)I 5=-1A 1.6 2.1V V D5-6Diode Forward Voltage between Pins 5-6I 5=1A 1.52V V D3-2Diode Forward Voltage between Pins 3-2I 3=1A 1.52V V 3L Saturation Voltage on Pin 3
I 3=20mA 0.8 1.2V V 3SH
Saturation Voltage to Pin 2(2nd part of flyback)
I 3=-1A
2.1
2.9
V
9378-03.T B L
Y O K E
POWER AMPLIFIER
4
5
7
1.5?
330?R5
R3R2
R4
R1
C L 0.22μF THERMAL PROTECTION
1
10μF
REFERENCE VOLTAGE +V S
2
3
6
C F
FLYBACK GENERATOR
10k ?
9378-03.E P S
APPLICATION CIRCUIT
STV9378
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10
1
1010-1
-2
1
10
102
I (A)
C V (V)
CE @T case =25°C
t =1ms t =10ms t =100ms
9378-04.E P S
Figure 1:Output Transistors SOA
(for secondary breakdown)
1009080
70
6025
50
75
100
125
ISB (%)
T case (°C)
9378-05.E P S
Figure 2:Secondary Breakdown Temperature
Derating Curve
(ISB =secondary breakdown current)
STV9378
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Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994SGS-THOMSON Microelectronics -All Rights Reserve d
Purchase of I 2C Components of SGS-THOMSON Microelectronics,conveys a license under the Philips I 2
C Patent.Rights to use these components in a I 2C system,is granted provided that the system conforms to
the I 2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia -Brazil -China -France -Germany -Hong Kong -Italy -Japan -Korea -Malaysia -Malta -Morocco The Netherlands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.
L2
L3
L5
L7
L6
Dia.
A
C
D
E
D 1
H 3
H 2
F
G
G 1
G 2
L1
L
M
M 1
F 1
P M -H E P T V .E P S
PACKAGE MECHANICAL DATA :7PINS -PLASTIC HEPTAWAT
Dimensions
Millimeters
Inches Min.
Typ.
Max.Min.
Typ.
Max.A 4.80.189C 1.370.054D 2.4 2.80.0940.110D1 1.2 1.350.0470.053E 0.350.550.0140.022F 0.6080.0240.031F10.90.035G 2.41 2.54 2.670.0950.1000.105G1 4.91 5.08 5.210.1930.2000.205G27.497.62
7.80.2950.300
0.307H210.40.409H310.05
10.4
0.396
0.409
L 16.970.668L114.920.587L221.540.848L322.62
0.891L5 2.630.1020.118L615.115.80.5940.622L76
6.60.236
0.260
M 2.80.110M1 5.08
0.200
Dia.
3.65
3.850.1440.152
H E P T V .T B L
STV9378
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