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P20NM60FD中文资料

August 2006 Rev 41/15

STF20NM60D - STP20NM60FD

STW20NM60FD

N-channel 600V - 0.26? - 20A - TO-220 - TO-220FP - TO-247

FDmesh? Power MOSFET (with fast diode)

General features

■High dv/dt and avalanche capabilities ■100% Avalanche tested

■Low input capacitance and gate charge ■Low gate input resistancE

■

Tight process control and high manufacturing yields

Description

The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Applications

■

Switching application

Type V DSS R DS(on)I D Pw STF20NM60D 600V <0.29?20A 192W STP20NM60FD 600V <0.29?20A 45W STW20NM60FD

600V

<0.29?

20A

214W

https://www.wendangku.net/doc/f14329708.html,

Order codes

Part number Marking Package Packaging STF20NM60D F20NM60D TO-220FP T ube STP20NM60FD P20NM60FD TO-220T ube STW20NM60FD

W20NM60FD

TO-247

T ube

Contents STF20NM60D - STP20NM60FD - STW20NM60FD

Contents

1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STF20NM60D - STP20NM60FD - STW20NM60FD Electrical ratings

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1 Electrical ratings

Table 1.

Absolute maximum ratings

Symbol Parameter

Value

Unit

TO-220

TO-220FP TO-247

V DS Drain-source voltage (V GS = 0)600V V DGR Drain-gate voltage (R GS = 20 k ?)600V V GS Gate- source voltage

± 30V I D Drain current (continuous) at T C = 25°C 2020 (1)1.Limited only by maximum temperature allowed 20A I D Drain current (continuous) at T C = 100°C 12.612.6 (1)12.6A I DM (2)2.Pulse width limited by safe operating area Drain current (pulsed)8080 (1)80A P TOT

T otal dissipation at T C = 25°C 19245214W Derating factor

1.20

0.36 1.42W/°C dv/dt (3)3.I SD < 20A, di/dt < 400A/μs, V DD = 80%V (BR)DSS

Peak diode recovery voltage slope 20

V/ns V ISO Insulation withstand voltage (DC)-2500-V T j T stg

Operating junction temperature Storage temperature

– 65 to 150

°C

°C Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

TO-247Rthj-case Thermal resistance junction-case Max 0.65

2.80.585°C/W Rthj-amb Thermal resistance junction-ambient Max

62.5

°C/W T l

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche data

Symbol Parameter

Value Unit I AR Avalanche current, repetitive or not-repetitive (pulse width limited by T j max)

10A E AS

Single pulse avalanche energy

(starting T j = 25 °C, I D = I AR , V DD = 35 V)

700

Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD

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2 Electrical characteristics

(T CASE =25°C unless otherwise specified)

Table 4.

On/off states

Symbol Parameter

Test conditions

Min Typ Max Unit

V (BR)DSS Drain-source breakdown

voltage

I D = 250μA, V GS = 0

600

V I DSS Zero gate voltage drain current (V GS = 0)V DS = Max rating

V DS = Max rating, T C = 125 °C 110μA μA I GSS Gate-body leakage current (V DS = 0)V GS = ±30V

±100μA V GS(th)Gate threshold voltage V DS = V GS , I D = 250μA 3

V R DS(on)

Static drain-source on resistance

V GS = 10V , I D = 10A

0.260.29

Table 5.

Dynamic

Symbol Parameter

Test conditions

Min

Typ Max Unit g fs (1)1.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

Forward transconductance V DS > I D(on) x R DS(on)max, I D =10A

9S C iss C oss C rss

Input capacitance Output capacitance

Reverse transfer capacitance

V DS = 25V , f = 1 MHz, V GS = 0

130050035pF pF pF C oss eq. (2)2.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS

increases from 0 to 80%

Equivalent output capacitance V GS = 0V , V DS = 0V to 480V

190pF R G Gate input resistance f=1 MHz Gate DC Bias = 0T est signal level = 20mV open drain

2.7?Q g Q gs Q gd

T otal gate charge Gate-source charge Gate-drain charge

V DD = 480V , I D = 20A,V GS = 10V

(see Figure 17)

371017

nC nC nC

STF20NM60D - STP20NM60FD - STW20NM60FD

Electrical characteristics

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Table 6.

Switching times

Symbol Parameter

Test conditions Min.

Typ.Max.Unit

t d(on)t r Turn-on delay time Rise time

V DD = 300V , I D = 10A R G =4.7? V GS = 10V (see Figure 16)2512ns ns t r(Voff)t f t c

Off-voltage rise time Fall time

Cross-over time

V DD = 480 V , I D = 20A, R G =4.7?, V GS = 10V (see Figure 16)

82230

ns ns ns

Table 7.

Source drain diode

Symbol Parameter

Test conditions

Min

Typ.

Max Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain current

Source-drain current (pulsed)2080A A V SD (2)2.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.

Forward on voltage I SD = 20 A, V GS = 0 1.5

V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 20 A, T j = 25°C di/dt =100A/μs,V DD =60V (see Figure 21)

240180016ns nC A t rr Q rr I RRM

Reverse recovery time Reverse recovery charge Reverse recovery current

I SD = 20 A, T j = 150°C di/dt =100A/μs,V DD =60V (see Figure 21)

396296020

ns nC A

Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD

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2.1 Electrical characteristics (curves)

Figure 1.

Safe operating area for TO-220Figure 2.

Thermal impedance for TO-220

Figure 3.

Safe operating areafor TO-220FP Figure 4.

Thermal impedance for TO-220FP

Figure 5.

Safe operating area for TO-247Figure 6.

Thermal impedance for TO-247

STF20NM60D - STP20NM60FD - STW20NM60FD Electrical characteristics Figure 7.Output characterisics Figure 8.Transfer characteristics

Figure 9.Transconductance Figure 10.Static drain-source on resistance

Figure 11.Gate charge vs gate-source voltage Figure 12.Capacitance variations

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Electrical characteristics

STF20NM60D - STP20NM60FD - STW20NM60FD 8/15

Figure 13.Normalized gate threshold voltage

Figure 14.Normalized on resistance vs

Figure 15.Source-drain diode forward

STF20NM60D - STP20NM60FD - STW20NM60FD Test circuit

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3 Test circuit

Figure 16.Switching times test circuit for

Figure 17.Gate charge test circuit

Figure 18.Test circuit for inductive load

Figure 19.Unclamped inductive load test

Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD 4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK?

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at : https://www.wendangku.net/doc/f14329708.html,

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STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data

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Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD

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STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data

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Revision history STF20NM60D - STP20NM60FD - STW20NM60FD

14/15

5 Revision history

Table 8.

Revision history

Date Revision

Changes

09-Sep-20041First release 21-Apr-20062New template 25-Jul-20063Modified part number

01-Aug-2006

Corrected unit on T able 5.: Dynamic

STF20NM60D - STP20NM60FD - STW20NM60FD

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