OD-F8HS59BL中文资料

CRYSTAL OSCILLATORS

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Data Sheet 0635G

OD-X8HXXXXX

Precision SC-cut OCXO in 20x20 mm Through Hole Package

CRYSTAL OSCILLATORS

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Data Sheet 0635G

OD-X8HXXXXX Series

Parameter Symb Condition Min Typ Max Unit Note Absolute Maximum Ratings

Input Break

Down Voltage

Vcc -0.5 13.0 V Storage temper. Ts -40 85 °C Control Voltage

Vc -1 9 V Electrical

Frequency

F 4.8 10.000 160 MHz 1* vs. Temp. ±10 ppb See chart below Frequency stability ?F/F

vs. Supply 1 2 ppb/V Aging

per day per year 5E-10 1E-7 after 30 days 5E-8 available2*Allan Variance

.1s to 10s 1E-11 SSB Phase Noise

1Hz 10 Hz 100 Hz 1 KHz 10 KHz -90 -120 -150 -153 -160 dBc/Hz 3* Retrace

After 30 minutes ±10 ppb G-sensitivity

worst direction ±1.0 ppb/G

A l l p a r a m e t e r s f o r 10 M H z

Input Voltage

Vcc 4.75 3.15 11.4 5.0 3.3 12.0 5.25 3.45 12.6

V See chart below to specify Power consumption

P steady state, 25°C steady state, -30°C start-up @ -30°C 0.8 1.5 2.5 1.2 3.2 W Standard Operating Temperature, for Op Temp. 85 °C ad 20% Spectral Purity

Subharmonics Spurious Harmonics/Sine -50 -35 -45 -80 -30

dBc At Higher Frequencies Load

10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave) Warm-up time τ to 0.1ppm accuracy 3 5 minutes 3 min. at 12V Output Waveform

3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm -25dBm Harmonics at sine Control voltage

Vc 0 4.0 V Pull range

from nominal F ±0.5 ±1 ppm Deviation slope

Monotonic, posit 0.4 ppm/V Setability

Vc0 @25°C, Fnom. 1.0 2.0 3.0 V Environmental and Mechanical

Operating temp. range

-30°C to 70°C Standard, Other options – see chart below Mechanical Shock

Per MIL-STD-202, 30G, 11ms Vibration

Per MIL-STD-202, 5G to 2000 Hz Soldering Conditions

260°C for 10s Max leads only Electrical Connections

Pin Out

Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;

Notes: 1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important – high frequency crystal will be used. If

phase noise close to the carrier and aging are more important – multiplication will be used. Please consult factory for your specific requirement. 2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication. Keep it in mind

while specifying aging. 3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range. If higher frequency is

achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or less the same. This design usually starts utilizing multiplication techniques in the range of 25 MHz to 35 MHz.

CRYSTAL OSCILLATORS

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

Data Sheet 0635G

OD-X8HXXXXX Series

Creating a Part Number

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