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IXGH24N60B中文资料

Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C

600 V V CGR T J = 25°C to 150°C; R GE = 1 M ?

600 V

V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 48A

I C90T C = 90

°C 24A I CM

T C = 25°C, 1 ms

A SSOA V GE = 15 V, T VJ = 125°C, R G = 22 ?I CM = 48A (RBSOA)Clamped inductive load @ 0.8 V CES

P C T C = 25°C

150

W T J -55 ... +150

°C T JM 150

°C T stg

-55 ... +150

°C Maximum lead temperature for soldering 300°C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque (M3)

1.13/10

Nm/lb.in.

Weight

Symbol Test Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min.typ.max.

BV CES I C = 250 μA, V GE = 0 V 600V V GE(th)I C = 250 μA, V CE = V GE

2.5

5.5V I CES V CE = 0.8 ? V CES T J = 25°C 200μA V GE = 0 V

T J = 125°C

1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)

I C

= I C90, V GE = 15 V

2.3

95584C(12/02)

Features

?International standard packages JEDEC TO-247 SMD surface

mountable and JEDEC TO-247 AD ?High frequency IGBT

?High current handling capability ?3rd generation HDMOS TM process ?MOS Gate turn-on -drive simplicity

Applications ?AC motor speed control ?DC servo and robot drives ?DC choppers

?Uninterruptible power supplies (UPS)?

Switched-mode and resonant-mode power supplies

Advantages

?High power density

?Switching speed for high frequency applications

?Easy to mount with 1 screw (insulated mounting screw hole)

TO-247 AD

C (TAB)

G = Gate, C = Collector,

E = Emitter,

TAB = Collector

HiPerFAST TM IGBT

IXGH 24N60B

V CES = 600 V I C25

= 48 A V CE(sat)= 2.3 V t fi

= 80 ns

Preliminary D ata

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T J = 25°C, unless otherwise specified)

min.typ. max.

g fs I C = I C90; V CE = 10 V,

13S

Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %

C ies 1500

pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz

175pF C res 40pF Q g 90

120nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES

1115nC Q gc 30

nC t d(on)25ns t ri 15ns E on 0.6mJ t d(off)150200ns t fi 80150ns E off 24N60B 0.80mJ t d(on)25ns t ri 15ns E on 0.8mJ t d(off)250ns t fi 100

ns E off 24N60B

1.4

mJ R thJC 0.83K/W

R thCK

0.25K/W

Remarks: Switching times may

increase for V CE (Clamp) > 0.8 ? V CES ,higher T J or increased R G Inductive load, T J = 25°C I C = I C90, V GE = 15 V

V CE = 0.8 V CES , R G = R off = 10 ?

1.Gate

2.Collector

3.Emitter

4.Collector

https://www.wendangku.net/doc/f38962134.html,limeter Inches Min.Max.Min.Max.A 4.83 5.21.190.205A1 2.29 2.54.090.100A2 1.91 2.16.075.085b 1.14 1.40.045.055b1 1.91 2.13.075.084C 0.610.80.024.031D 20.8021.34.819.840E 15.7516.13.620.635e 5.45BSC .215BSC L 4.90 5.10.193.201L1 2.70 2.90.106.114L2 2.10 2.30.083.091L30.000.10.00.004L4 1.90 2.10.075.083?P 3.55 3.65.140.144Q 5.59 6.20.220.244R 4.32 4.83.170.190S

6.15

BSC

.242

BSC

TO-247 SMD Outline

Min. Recommended Footprint (Dimensions in inches and (mm))

Remarks: Switching times may

increase for V CE (Clamp) > 0.8 ? V CES ,higher T J or increased R G

Inductive load, T J = 125°C I C = I C90, V GE = 15 V

V CE = 0.8 V CES , R G = R off = 10 ?

-50

-250255075100125150

B V /V G E (t h ) - N o r m a l i z e d

0.70.80.91.01.11.2

T J - Degrees C

5075100125150

V C E (s a t ) - N o r m a l i z e d

0.60.81.0

1.2

1.41.6

V CE - Volts 012345I C - A m p e r e s

010

203040

3456789101112

I C - A m p e r e s

6080

100

V CE - Volts

0246810

I C - A m p e r e s

80120160

200

V CE - Volts

012345

I C - A m p e r e s

1020304050

Fig. 1. Saturation Voltage Characteristics

Fig. 2. Extended Output Characteristics

Fig. 4. Temperature Dependence of V CE(sat)

Fig. 3. Saturation Voltage Characteristics

Fig. 5. Admittance Curves

Fig. 6. Temperature Dependence of BV DSS & V GE(th)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Pulse Width - Seconds

0.00001

0.00010.0010.010.11

R t h J C - K /W

0.001

0.01

0.1

Q g - nanocoulombs

020*********

V G E - V o l t s

36912

15R G - Ohms

010********

E (O N ) / E (O

F F ) - m i l l i J o u l e s

0.0

0.51.01.52.02.5

I C - Amperes

010********

E (O N ) / E (O

F F ) - m i l l i J o u l e s

0.0

0.51.01.52.02.5

Fig. 11. Transient Thermal Resistance

Fig. 9. Gate Charge

Fig. 7. Dependence of tfi and E OFF on I C .

Fig. 8. Dependence of tfi and E OFF on R G .