IRFR/U6215
PRELIMINARY
HEXFET ? Power MOSFET
Description
5/11/98
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V -13I D @ T C = 100°C Continuous Drain Current, V GS @ 10V -9.0A I DM
Pulsed Drain Current -44P D @T C = 25°C Power Dissipation 110W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 310mJ I AR Avalanche Current
-6.6A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 1.4R θJA Junction-to-Ambient (PCB mount) **–––50°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P AK T O -252AA
I-PA K TO -251AA
l
P-Channel
l 175°C Operating Temperature l Surface Mount (IRFR6215)l Straight Lead (IRFU6215)
l Advanced Process Technology l Fast Switching
l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
PD - 91749
IRFR/U6215
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IRFR/U6215
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IRFR/U6215