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低功耗低相位噪声4.8GHz CMOS压控振荡器芯片设计
作者:樊祥宁, 曾军, 李斌, 朱薇薇, Fan Xiangning, Zeng Jun, Li Bin, Zhu Weiwei
作者单位:东南大学射频与光电集成电路研究所 南京210096
刊名:
高技术通讯
英文刊名:Chinese High Technology Letters
年,卷(期):2011,21(12)
被引用次数:1次
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引证文献(1条)
1.易鸿一种低功耗低相位噪声的压控振荡器设计[期刊论文]-陕西理工学院学报(自然科学版) 2014(06)
引用本文格式:樊祥宁.曾军.李斌.朱薇薇.Fan Xiangning.Zeng Jun.Li Bin.Zhu Weiwei低功耗低相位噪声4.8GHz CMOS压控振荡器芯片设计[期刊论文]-高技术通讯 2011(12)