Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
V DSX Drain – Source Voltage V GSS Gate – Source Voltage I D Continuous Drain Current I D(PK)Body Drain Diode P D Total Power Dissipation @ T case = 25°C
T stg Storage T emperature Range
T j Maximum Operating Junction Temperature R θJC
Thermal Resistance Junction – Case
±14V 8A 8A 125W –55 to 150°C
150°C 1.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
B S C
N–CHANNEL POWER MOSFET
FEATURES
?HIGH SPEED SWITCHING ?N–CHANNEL POWER MOSFET ?SEMEFAB DESIGNED AND DIFFUSED ?HIGH VOLTAGE (160V & 200V)?HIGH ENERGY RATING
?ENHANCEMENT MODE
?INTEGRAL PROTECTION DIODE ?P–CHANNEL ALSO AVAILABLE AS BUZ905P & BUZ906P
Pin 1 – Gate
TO–247
Pin 2 – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T case = 25°C unless otherwise stated)POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ900P
160V
BUZ901P 200V
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900P BUZ901P
Characteristic
Test Conditions
Min.
Typ.Max.Unit
BV DSX Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage V GS(OFF)Gate – Source Cut–Off Voltage V DS(SAT)*
Drain – Source Saturation Voltage
I DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
160200±140.15
1.51210
100.7
2
* Pulse Test: Pulse Width = 300μs , Duty Cycle ≤2%.
V GS = –10V BUZ900P I D = 10mA BUZ901P V DS = 0I G = ±100μA V DS = 10V I D = 100mA V GD = 0
I D =8A V DS = 160V
BUZ900P V GS = –10V
V DS = 200V BUZ901P
V DS = 10V
I D = 3A
V V
V V
mA
S
Characteristic
Test Conditions
Min.Typ.
Max.Unit
C iss Input Capacitance C oss Output Capacitance
C rss Reverse Transfer Capacitance t on Turn–on Time t off
Turn-off Time
5003001010050
V DS = 10V f = 1MHz V DS = 20V I D = 5A
pF
ns
STATIC CHARACTERISTICS (T case = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated)
25
50
75
100
125
150
025
50
75
100
125
150
T — CASE TEMPERATURE (?C)C
C H A N N E L
D I S S I P A T I O N (W )
Derating Chart
0102030405060708090
12345
67
89P = 12
5W
C H
I — D R A I N C U R R E N T (A )
D V — DRAIN – SOURC
E VOLTAGE (V)DS
C
T = 75?C 6V
5V
4V
3V
2V
Typical Output Characteristics
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900P
BUZ901P
2
4
6
8
10
12
14
02
4
6
8
10
V — GATE – SOURCE VOLTAGE (V)GS
V — D R A I N – S O U R C E V O L T A G E (V )D
S T = 25?C C
I = 6A D
I = 3A D
I = 1A D
Drain – Source Voltage
vs
Gate – Source Voltage
012345678
12
34567
89I — D R A I N C U R R E N T (A )
D V — GAT
E – SOURCE VOLTAGE (V)GS
V = 10V DS
T = 100?C C
T = 25?C C
T = 75?C C
Typical Transfer Characteristics
10
203040506070809001234567
89P =
12
5W
C H
I — D R A I N C U R R E N T (A )
D V — DRAIN – SOURC
E VOLTAGE (V)DS T = 25?C C
6V
5V
4V
3V
2V
1
10
100
1000
0.01
0.1
1
10
I — D R A I N C U R R E N T (A )
D V — DRAIN – SOURC
E VOLTAGE (V)DS
160V
200V
D C
O
P E
R A
T I
O
N
T = 25?C C
BUZ900
BUZ901
1
2
3
4
5
6
7
8
0.1
1
10
100
G — T R A N S C O N D U C T A N C E (S )F
S I — DRAIN CURRENT (A)D
T = 25?C C T = 75?C C
V = 20V DS
Typical Output Characteristics
Forward Bias Safe Operating Area
Transconductance