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BUZ900P中文资料

BUZ900P中文资料
BUZ900P中文资料

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94

V DSX Drain – Source Voltage V GSS Gate – Source Voltage I D Continuous Drain Current I D(PK)Body Drain Diode P D Total Power Dissipation @ T case = 25°C

T stg Storage T emperature Range

T j Maximum Operating Junction Temperature R θJC

Thermal Resistance Junction – Case

±14V 8A 8A 125W –55 to 150°C

150°C 1.0°C/W

MECHANICAL DATA

Dimensions in mm (inches)

B S C

N–CHANNEL POWER MOSFET

FEATURES

?HIGH SPEED SWITCHING ?N–CHANNEL POWER MOSFET ?SEMEFAB DESIGNED AND DIFFUSED ?HIGH VOLTAGE (160V & 200V)?HIGH ENERGY RATING

?ENHANCEMENT MODE

?INTEGRAL PROTECTION DIODE ?P–CHANNEL ALSO AVAILABLE AS BUZ905P & BUZ906P

Pin 1 – Gate

TO–247

Pin 2 – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

(T case = 25°C unless otherwise stated)POWER MOSFETS FOR AUDIO APPLICATIONS

BUZ900P

160V

BUZ901P 200V

TEC

MAGNA

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94

BUZ900P BUZ901P

Characteristic

Test Conditions

Min.

Typ.Max.Unit

BV DSX Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage V GS(OFF)Gate – Source Cut–Off Voltage V DS(SAT)*

Drain – Source Saturation Voltage

I DSX

Drain – Source Cut–Off Current

yfs*

Forward Transfer Admittance

160200±140.15

1.51210

100.7

2

* Pulse Test: Pulse Width = 300μs , Duty Cycle ≤2%.

V GS = –10V BUZ900P I D = 10mA BUZ901P V DS = 0I G = ±100μA V DS = 10V I D = 100mA V GD = 0

I D =8A V DS = 160V

BUZ900P V GS = –10V

V DS = 200V BUZ901P

V DS = 10V

I D = 3A

V V

V V

mA

S

Characteristic

Test Conditions

Min.Typ.

Max.Unit

C iss Input Capacitance C oss Output Capacitance

C rss Reverse Transfer Capacitance t on Turn–on Time t off

Turn-off Time

5003001010050

V DS = 10V f = 1MHz V DS = 20V I D = 5A

pF

ns

STATIC CHARACTERISTICS (T case = 25°C unless otherwise stated)

DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated)

25

50

75

100

125

150

025

50

75

100

125

150

T — CASE TEMPERATURE (?C)C

C H A N N E L

D I S S I P A T I O N (W )

Derating Chart

0102030405060708090

12345

67

89P = 12

5W

C H

I — D R A I N C U R R E N T (A )

D V — DRAIN – SOURC

E VOLTAGE (V)DS

C

T = 75?C 6V

5V

4V

3V

2V

Typical Output Characteristics

TEC

MAGNA

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 10/94

BUZ900P

BUZ901P

2

4

6

8

10

12

14

02

4

6

8

10

V — GATE – SOURCE VOLTAGE (V)GS

V — D R A I N – S O U R C E V O L T A G E (V )D

S T = 25?C C

I = 6A D

I = 3A D

I = 1A D

Drain – Source Voltage

vs

Gate – Source Voltage

012345678

12

34567

89I — D R A I N C U R R E N T (A )

D V — GAT

E – SOURCE VOLTAGE (V)GS

V = 10V DS

T = 100?C C

T = 25?C C

T = 75?C C

Typical Transfer Characteristics

10

203040506070809001234567

89P =

12

5W

C H

I — D R A I N C U R R E N T (A )

D V — DRAIN – SOURC

E VOLTAGE (V)DS T = 25?C C

6V

5V

4V

3V

2V

1

10

100

1000

0.01

0.1

1

10

I — D R A I N C U R R E N T (A )

D V — DRAIN – SOURC

E VOLTAGE (V)DS

160V

200V

D C

O

P E

R A

T I

O

N

T = 25?C C

BUZ900

BUZ901

1

2

3

4

5

6

7

8

0.1

1

10

100

G — T R A N S C O N D U C T A N C E (S )F

S I — DRAIN CURRENT (A)D

T = 25?C C T = 75?C C

V = 20V DS

Typical Output Characteristics

Forward Bias Safe Operating Area

Transconductance

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