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C339C_datasheet

DATA SHEET

Document No. G11764EJ3V0DS00 (3rd edition) (Previous No. IC-1986)

Date Published February 1997 N

Printed in Japan The mark shows major revised points.

?1997

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)

Parameter Symbol Ratings Unit Voltage between V+ and V–Note 1V+ –V––0.3 to +36V Differential Input Voltage V ID±36V Input Voltage Note 2V I V– –0.3 to V– +36V Output Voltage Note 3V O V– –0.3 to V– +36V Power Dissipation C Package Note 4P T570mW

G2 Package Note 5550mW Output Short Circuit Duration Note 6Indefinite sec Operating Ambient Temperature T A–20 to +80°C Storage Temperature T stg–55 to + 125°C

Notes1.Reverse connection of supply voltage can cause destruction.

2.The input voltage should be allowed to input without damage or destruction independent of the

magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal

operation will establish when any input is within the Common Mode Input Voltage Range of electrical

characteristics.

3.This specification is the voltage which should be allowed to supply to the output terminal from external

without damage or destruction independent of the magnitude of V+. Even during the transition period

of supply voltage, power on/off etc., this specification should be kept.

4.Thermal derating factor is –7.6 mW/°C when operating ambient temperature is higher than 55 °C.

5.Thermal derating factor is –5.5 mW/°C when operating ambient temperature is higher than 25 °C.

6.Short circuits from the output to V+ can cause destruction. Pay careful attention to the total power

dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5.

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN.TYP.MAX.Unit Supply Voltage (Split)V±±1±16V Supply Voltage (V– = GND)V++2+32V

ELECTRICAL CHARACTERISTICS (T A = 25 °C, V + = 5 V, V – = GND)

Parameter

Symbol Conditions

MIN.

TYP.MAX.Unit Input Offset Voltage V IO V O = 1.4 V, V REF = 1.4 V, R S = 0 ?±2±5mV Input Offset Current I IO V O = 1.4 V ±5±50nA Input Bias Current I B V O = 1.4 V 25250

nA Voltage Gain A V R L = 15 k ?

200V/mV Supply Current

I CC R L = ∞, I O = 0 A, All Comparators

0.8

2mA Common Mode lnput Voltage Range V ICM 0

V +–1.5V Output Saturation Voltage V OL V IN (–) = 1 V, V IN (+) = 0 V, I O SINK = 4 mA 0.20.4V Output Sink Current I O SINK V IN (–) = 1 V, V IN (+) = 0 V, V O ≤ 1.5 V 6

16mA Output Leakage Current I O LEAK

V IN (+) = 1 V, V IN (–) = 0 V, V O = 5 V 0.1nA

Response Time

R L = 5.1 k ?, V RL = 5 V

1.3

μs

· ·· ·

V APPLICATION CIRCUIT EXAMPLE

Threshold voltage

V TH (High) = V REF + (V RL – V REF )V TH (Low) = V REF – (V REF – V OL )(V RL > V REF > V OL )

R 1

R L + R 2 + R 1R 112· ·· ·?

TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25 °C, TYP.)

3210–1–2

INPUT OFFSET VOLTAGE

–3010203040

1.2

1.0

0.8

0.6

SUPPLY CURRENT

I C C - S u p p l y C u r r e n t - m A

V + - Supply Voltage - V (V – = GND)

1,000

800

600400

200

020*********

POWER DISSIPATION

T A - Operating Ambient Temperature - °C

T A - Operating Ambient Temperature - °C P T - T o t a l P o w e r D i s s i p a t i o n - m W

V I O - I n p u t O f f s e t V o l t a g e - m V

V O L - O u t p u t S a t u r a t i o n V o l t a g e - V

010203040

I B - I n p u t B i a s C u r r e n t - n A

T A = 0 °C

T A = 25 °C

T A = 70 °C

V + - Supply Voltage - V (V – = GND)

INPUT BIAS CURRENT

0.1

0.01

0.001

0.01

0.1

100

OUTPUT SATURATION VOLTAGE

I O SINK - Output Sink Current - mA

μPC339

–50

–100

00.5 1.0 1.5 2.0

t - Time - s

RESPONSE TIME FOR VARIOUS INPUT

OVERDRIVES I

RESPONSE TIME FOR VARIOUS INPUT

OVERDRIVES II

t - Time - s

00.5 1.0 1.5 2.0

μPC339

14PIN PLASTIC DIP (300 mil)

ITEM MILLIMETERS INCHES NOTES

1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition.P14C-100-300B1-1

N 0.250.01R

0~15°

A 20.32 MAX.0.800 MAX.

B 2.54 MAX.0.100 MAX.F 1.2 MIN.0.047 MIN.G 3.6±0.30.142±0.012J 5.08 MAX.0.200 MAX.K 7.62 (T.P.)0.300 (T.P.)

C 2.54 (T.P.)0.100 (T.P.)

D 0.50±0.100.020+0.004–0.005H 0.51 MIN.0.020 MIN.I 4.31 MAX.0.170 MAX.L 6.40.252M 0.250.010+0.004–0.003+0.10–0.052) ltem "K" to center of leads when formed parallel.

PACKAGE DRAWINGS

μPC339

14 PIN PLASTIC SOP (225 mil)

NOTE

Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.

ITEM MILLIMETERS INCHES A B C E F G H I J 10.46 MAX.1.27 (T.P.)1.8 MAX.1.496.5±0.31.42 MAX.0.121.14.4M 0.1±0.1N 0.412 MAX.0.056 MAX.0.004±0.0040.071 MAX.0.0590.256±0.0120.1730.0430.0050.050 (T.P.)S14GM-50-225B, C-4

3°3°+7°D 0.400.016+0.10–0.05K 0.150.006+0.10–0.05L 0.6±0.20.0240.10–3°

+7°–3°

0.004+0.008–0.009+0.004–0.002+0.004–0.003

RECOMMENDED SOLDERING CONDITIONS

When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices.

For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”(C10535E).

Surface mount device

μPC339G2: 14-pin plastic SOP (225 mil)

Process Conditions Symbol

Infrared ray reflow Peak temperature: 230 °C or below (Package surface temperature),IR30-00-1

Reflow time: 30 seconds or less (at 210 °C or higher),

Maximum number of reflow processes: 1 time.

Vapor Phase Soldering Peak temperature: 215 °C or below (Package surface temperature),VP15-00-1

Reflow time: 40 seconds or less (at 200 °C or higher),

Maximum number of reflow processes: 1 time.

Wave Soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less,WS60-00-1

Maximum number of flow processes: 1 time,

Pre-heating temperature: 120 °C or below (Package surface temperature).

Partial heating method Pin temperature: 300 °C or below,–

Heat time: 3 seconds or less (Per each side of the device).

Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress.

Through-hold device

μPC339C: 14-pin plastic DIP (300 mil)

Process Conditions

Wave soldering Solder temperature: 260 °C or below,

(only to leads)Flow time: 10 seconds or less.

Partial heating method Pin temperature: 300 °C or below,

Heat time: 3 seconds or less (per each lead.)

Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.

REFERENCE DOCUMENTS

QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E IC PACKAGE MANUAL C10943X GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES MEI-1202 SEMICONDUCTORS SELECTION GUIDE X10679E NEC SEMICONDUCTOR DEVICE RELIABILITY/IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC

[MEMO]

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use

of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of

a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96.5 2