BUK9Y14-40B,115;中文规格书,Datasheet资料
1.Product profile
1.1General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2Features and benefits
1.3Applications
1.4Quick reference data
BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008
Product data sheet
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Air bag
Automotive ABS systems Automotive transmission control Diesel injection systems
Fuel pump and injection Motors, lamps and solenoids
Table 1.Quick reference Symbol Parameter
Conditions
Min Typ Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C --40V I D drain current
V GS =5V;T mb =25°C; see Figure 4 and 1--56A P tot total power dissipation T mb =25°C; see Figure 2--85W Dynamic characteristics
Q GD
gate-drain charge
V GS =5V;I D =10A;
V DS =32V; see Figure 14-9
-nC
Static characteristics R DSon
drain-source on-state resistance
V GS =5V;I D =20A;
T j =25°C; see Figure 12 and 13
-12
14
m Ω
Avalanche ruggedness E DS(AL)S
non-repetitive drain-source
avalanche energy
I D =56A; V sup ≤40V; R GS =50Ω; V GS =5V; T j(init)=25°C; unclamped
--89
mJ
2.Pinning information
3.Ordering information
4.Limiting values
[1]Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.[2]Repetitive avalanche rating limited by average junction temperature of 170 °C.[3]
Refer to application note AN10273 for further information.
Table 2.Pinning Pin Symbol Description Simplified outline
Graphic symbol
1, 2, 3S source SOT669 (LFPAK)
4G gate
mb
D
mounting base; connected to drain
mb
123
4
Table 3.
Ordering information
Type number
Package Name
Description
Version BUK9Y14-40B
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
Table 4.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions
Min Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C
-40V V GS gate-source voltage 1515V I D drain current T mb =25°C; V GS =5V; see Figure 4 and 1-56A T mb =100°C; V GS =5V; see Figure 1-40A I DM peak drain current T mb =25°C; t p ≤10μs; pulsed; see Figure 4-226A P tot total power dissipation T mb =25°C; see Figure 2
-85W T stg storage temperature -55175°C T j
junction temperature
-55175°C Avalanche ruggedness
E DS(AL)S non-repetitive
drain-source avalanche energy I D =56A;V sup ≤40V; R GS =50Ω; V GS =5V; T j(init)=25°C; unclamped -
89
mJ
E DS(AL)R repetitive drain-source
avalanche energy see Figure 3
[1][2][3]
--J
Source-drain diode I S source current T mb =25°C
-56A I SM
peak source current
t p ≤10μs; pulsed; T mb =25°C
-
226
A
5.Thermal characteristics
Table 5.Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb)
thermal resistance from junction to mounting base
see Figure 5
-
-
1.8
K/W
6.Characteristics
Table 6.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source
breakdown voltage I D=250μA; V GS=0V;
T j=25°C
40--V
I D=250μA; V GS=0V;
T j=-55°C
36--V
V GS(th)gate-source threshold
voltage I D=1mA; V DS = V GS;
T j=-55°C; see Figure10
-- 2.3V
I D=1mA;V DS = V GS; T j=25°C;
see Figure11 and 10
1.1 1.52V
I D=1mA; V DS = V GS;
T j=175°C; see Figure10
0.5--V
I DSS drain leakage current V DS=40V;V GS=0V;
T j=175°C
--500μA
V DS=40V;V GS=0V; T j=25°C-0.021μA I GSS gate leakage current V DS=0V; V GS=20V; T j=25°C-2100nA
V DS=0V; V GS=-20V;
T j=25°C
-2100nA
R DSon drain-source on-state
resistance V GS=5V;I D=20A;T j=175°C;
see Figure12
--26mΩV GS=4.5V;I D=20A;T j=25°C--16mΩV GS=10V; I D=20A; T j=25°C-911mΩV GS=5V;I D=20A;T j=25°C;
see Figure12 and 13
-1214mΩ
Source-drain diode
V SD source-drain voltage I S=25A;V GS=0V; T j=25°C;
see Figure16
-0.85 1.2V
t rr reverse recovery time I S=20A;dI S/dt=-100A/μs;
V GS=0V;V DS=30V -50-ns
Q r recovered charge-26-nC Dynamic characteristics
Q G(tot)total gate charge I D=10A;V DS=32V;V GS=5V;
see Figure14-21-nC
Q GS gate-source charge- 3.7-nC Q GD gate-drain charge-9-nC
C iss input capacitance V GS=0V;V DS=25V;
f=1MHz; T j=25°C;
see Figure15-13601800pF
C oss output capacitance-274330pF C rss reverse transfer
capacitance
-147200pF
t d(on)turn-on delay time V DS=30V;R L=2.5Ω;
V GS=5V;R G(ext)=10Ω-15-ns
t r rise time-34-ns t d(off)turn-off delay time-68-ns t f fall time-42-ns
7.Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Fig 17.Package outline SOT669 (LFPAK)
8.Revision history
Table 7.Revision history
Document ID Release date Data sheet status Change notice Supersedes BUK9Y14-40B_320080602Product data sheet BUK9Y14-40B_2 Modifications:?Table4 V DS temperature operating range corrected
BUK9Y14-40B_220080523Product data sheet-BUK9Y14-40B_1 BUK9Y14-40B_120070903Product data sheet--
分销商库存信息: NXP
BUK9Y14-40B,115