RN771VTE-17;中文规格书,Datasheet资料
Diodes
Rev.A 1/2
PIN diode
RN771V
z Applications
For AGC, Switching.
z Features
1) Small mold type. (UMD2)
2) High frequency resistance which is small and low capacity .
z Construction z Silicon epitaxial planar
z Taping dimensions (Unit : mm)
z Electrical characteristics (T a=25°C)
Diodes
Rev.A 2/2
z Electrical characteristic curves (T a=25°C)
FORWARD VOLTAGE：VF(mV)VF-IF CHARACTERISTICS
F O R W A R D C U R R E N T :I F (m A )
R E V E R S E C U R R E N T :I R (n A )REVERSE VOLTAGE：VR(V)VR-IR CHARACTERISTICS
C A P A C I T A N C E B E T W E E N
T E R M I N A L S :C t (p F )REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICS
VF DISPERSION MAP
F O R W A R D V O L T A
G E :V F (m V )
R E V E R S E C U R R E N T :I R (n A )IR DISPERSION MAP C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
Ct DISPERSION MAP
E L E C T R O S T A T I C D D I S C H A R G E T
E S T E S D (K V )
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)rf-IF CHARACTERISTICS F O R W A R D O P E R A T I N G R E S I S T A N C E :r f (Ω)
C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
FREQUENCY(MHz)Ct-f CHARACTERISTICS
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
F O R W A R D O P E R A T I N
G R
E S I S T A N C E :r f (Ω
)
0.11
10
100
100
200
300
400
500
600
700
800
90010001100
0.1
110
100
100010000100000
10203040
50
0.1
1
10
5
1015202530
35
700
720
740
760
780
800
0.3
0.4
0.5
0.6
1
2
3
4
5
1
2
3
4
110
100
1000
10000
0.01
0.1
1
10
0.1
1
100.1
1
10
102030405060708090100
Appendix1-Rev2.0
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Appendix
分销商库存信息: ROHM
RN771VTE-17