White Electronic Designs
WF512K32-XXX5
FEATURES
Access Times of 60, 70, 90, 120, 150ns Packaging
? 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400(1)).
? 68 lead, 40mm, Low Capacitance Hermetic CQFP (Package 501)1
? 68 lead, 40mm, Low Pro? le 3.5mm (0.140"),
CQFP (Package 502)
1
? 68 lead, 22.4mm (0.880") Low Pro? le CQFP (G2U) 3.5mm (0.140") high, (Package 510)1?
68 lead, 22.4mm (0.880") CQFP (G2L) 5.08mm (0.200") high, Package (528)
1,000,000 Erase/Program Cycles Minimum Sector Architecture
? 8 equal size sectors of 64KBytes each
?
Any combination of sectors can be concurrently erased. Also supports full chip erase
Organized as 512Kx32
FIGURE 1 – PIN CONFIGURATION FOR WF512K32N-XH1X5512Kx32 5V FLASH MODULE, SMD 5962-94612
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming. 5V ± 10% Supply. Low Power CMOS, 6.5mA Standby Embedded Erase and Program Algorithms TTL Compatible Inputs and CMOS Outputs
Built-in Decoupling Caps for Low Noise Operation Page Program Operation and I
nternal Program Control Time
Weight
WF512K32 - XG2UX5 - 8 grams typical
WF512K32N - XH1X5 - 13 grams typical WF512K32 - XG4TX51 - 20 grams typical WF512K32-XG2LX5 - 8 grams typical
* This product is subject to change without notice.Note 1: Package Not Recommended for New Design
See Flash Programming Application Note 4M5 for algorithms.
White Electronic Designs WF512K32-XXX5 FIGURE 2 – PIN CONFIGURATION FOR WF512K32-XG4TX51
White Electronic Designs
WF512K32-XXX5
Absolute Maximum Ratings (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is Vcc + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 1
4.0 V for periods up to 20ns.
Parameter
Unit
Operating Temperature -55 to +125°C Supply Voltage Range (V CC )
-2.0 to +7.0V Signal voltage range (any pin except A9) (2)-2.0 to +7.0V Storage Temperature Range
-65 to +150°C Lead Temperature (soldering, 10 seconds)+300°C Data Retention (Mil Temp)
20 years
Endurance - write/erase cycles (Mil Temp)1,000,000 cycles min.
A9 Voltage for sector protect (V ID ) (3)-2.0 to +14.0V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage V CC 4.5 5.5V Input High Voltage V IH 2.0V CC + 0.5V Input Low Voltage V IL -0.5+0.8V Operating Temp. (Mil.)T A -55+125°C Operating Temp. (Ind.)
T A -40+85°C A 9 Voltage for Sector Protect
V ID
11.5
12.5
V
CAPACITANCE
T A = +25°C
Parameter
Symbol Conditions Max Unit
OE# capacitance C OE V IN = 0V, f = 1.0 MHz 50pF WE 1-4# capacitance HIP (PGA)C WE V IN = 0V, f = 1.0 MHz
20pF
CQFP G4T 50CQFP G2U/G2L 15
CS 1-4# capacitance C CS V IN = 0V, f = 1.0 MHz 20pF Data# I/O capacitance C I/O V I/O = 0V, f = 1.0 MHz 20pF Address input capacitance
C A
D V IN = 0V, f = 1.0 MHz 50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V CC = 5.0V, V SS = 0V, -55°C ≤ T A ≤ +125°C
Parameter
Sym
Conditions
Min Max
Units
Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC
10μA Output Leakage Current I LOx32CS# = V IH , OE# = V IH , V OUT = GND to V CC 10μA V CC Active Current for Read (1)
I CC1CS# = V IL , OE# = V IH , f = 5MHz, V CC = 5.5190mA V CC Active Current for Program or Erase (2)I CC2CS# = V IH , OE# = V IH
240mA V CC Standby Current I CC4V CC = 5.5, CS = V IH , f = 5MHz 6.5mA V CC Static Current I CC3V CC = 5.5, CS = V IH 0.6mA Output Low Voltage V OL I OL = 8.0mA, V CC = 4.50.45
V Output High Voltage
V OH1I OH = 2.5mA, V CC = 4.5
0.85 X V CC
V
Low V CC Lock-Out Voltage
V LKO
3.2
4.2
V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V NOTES:
1. The I
CC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at V IH .2. I
CC active while Embedded Algorithm (program or erase) is in progress.
White Electronic Designs WF512K32-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
V CC = 5.0V, GND = 0V, -55°C ≤ T A≤ +125°C
Parameter Symbol-60-70-90-120-150Unit
Min Max Min Max Min Max Min Max Min Max
Write Cycle Time t AVAV t WC607090120150ns Write Enable Setup Time t WLEL t WS00000ns Chip Select Pulse Width t ELEH t CP4045455050ns Address Setup Time t AVEL t AS00000ns Data Setup Time t DVEH t DS4045455050ns Data Hold Time t EHDX t DH00000ns Address Hold Time t ELAX t AH4045455050ns Chip Select Pulse Width High t EHEL t CPH202020 2020ns Duration of Byte Programming Operation (1)t WHWH1300300300300300μs Sector Erase Time (2)t WHWH21515151515sec Read Recovery Time t GHEL00000ns Chip Programming Time1111111111sec Chip Erase Time (3)6464646464sec NOTES:
1. Typical value for t WHWH1 is 7μs.
2. Typical value for t WHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
FIGURE. 4 – AC TEST CIRCUIT
White Electronic Designs WF512K32-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED
V CC = 5.0V, GND = 0V, -55°C ≤ T A≤ +125°C
Parameter Symbol-60-70-90-120-150Unit
Min Max Min Max Min Max Min Max Min Max
Write Cycle Time t AVAV t WC607090120150ns Chip Select Setup Time t ELWL t CS00000ns Write Enable Pulse Width t WLWH t WP4045455050ns Address Setup Time t AVWH t AS00000ns Data Setup Time t DVWH t DS4045455050ns Data Hold Time t WHDX t DH00000ns Address Hold Time t WHAX t AH4045455050ns Write Enable Pulse Width High t WHWL t WPH2020202020ns Duration of Byte Programming Operation (1)t WHWH1300300300300300μs Sector Erase Time (2)t WHWH21515151515sec Read Recovery Time before Write t GHWL00000ns VCC Set-up Time t VCS5050505050μs Chip Programming Time1111111111sec Output Enable Setup Time t OES00000ns Output Enable Hold Time (4)t OEH1010101010ns Chip Erase Time (3)6464646464sec NOTES:
1. Typical value for t WHWH1 is 7μs.
2. Typical value for t WHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,WE# CONTROLLED
V CC = 5.0V, -55°C ≤ T A≤ +125°C
Parameter Symbol-60-70-90-120-150Unit
Min Max Min Max Min Max Min Max Min Max
Read Cycle Time t AVAV t RC607090120150ns Address Access Time t AVQV t ACC607090120150ns Chip Select Access Time t ELQV t CE607090120150ns Output Enable to Output Valid t GLQV t OE3035355055ns Chip Select to Output High Z (1)t EHQZ t DF2020203035ns Output Enable High to Output High Z (1)t GHQZ t DF2020203035ns Output Hold from Address, CS# or OE#
t AXQX t OH00000ns Change, whichever is First
1. Guaranteed by design, but not tested
White Electronic Designs WF512K32-XXX5 FIGURE 5 – AC WAVEFORMS FOR READ OPERATIONS
White Electronic Designs WF512K32-XXX5 FIGURE 6 – WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED
White Electronic Designs WF512K32-XXX5 FIGURE 7 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
White Electronic Designs WF512K32-XXX5 FIGURE 8 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED
ALGORITHM OPERATIONS
White Electronic Designs WF512K32-XXX5 FIGURE 9 – ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS
White Electronic Designs WF512K32-XXX5 PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs WF512K32-XXX5 PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs WF512K32-XXX5 PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs WF512K32-XXX5 PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs
WF512K32-XXX5
ORDERING INFORMATION
LEAD FINISH: Blank = Gold plated leads
A = Solder dip leads
V PP PROGRAMMING VOLTAGE 5 = 5 V
DEVICE GRADE: Q = MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C I = I ndustrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400*) G2U = 22.4mm Ceramic Quad Flat Pack, Low Pro? le CQFP (Package 510) G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)
G4T 1 = 40mm Low Pro? le CQFP (Package 502)
ACCESS TIME (ns)
IMPROVEME N
T MARK
N = No Connect at pins 21 and 39 in HIP for Upgrade ORGANIZATION, 512K x 32
User con? gurable as 1M x 16 or 2M x 8
FLASH
WHITE ELECTRONIC DESIGNS CORP .
W F 512K32 X - XXX X X 5 X
Note 1: Package Not Recommended for New Design
White Electronic Designs WF512K32-XXX5