BUZ338中文资料

SIPMOS ?

Power Transistor

? N channel

? Enhancement mode ? Avalanche-rated

Pin 1Pin 2Pin 3

G D S

Type

V DS I D R DS(on )

Package Ordering Code

BUZ 338500 V 13.5 A

0.4 ?

TO-218 AA C67078-S3126-A2

Maximum Ratings Parameter

Symbol

Values

Unit

Continuous drain current T C = 28 °C

I D

13.5

A

Pulsed drain current T C = 25 °C

I Dpuls

54

Avalanche current,limited by T jmax

I AR 13.5Avalanche energy,periodic limited by T jmax E AR 18

mJ

Avalanche energy, single pulse I D = 13.5 A, V DD = 50 V, R GS = 25 ?L = 9.18 mH, T j = 25 °C E AS

930

Gate source voltage V GS ± 20

V Power dissipation T C = 25 °C

P tot

180

W

Operating temperature T j -55 ... + 150°C

Storage temperature

T stg -55 ... + 150Thermal resistance, chip case R thJC ≤ 0.7

K/W

Thermal resistance, chip to ambient R thJA

75DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Static Characteristics

Drain- source breakdown voltage

V GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS

500--

V

Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)

2.1 3 4

Zero gate voltage drain current

V DS = 500 V, V GS = 0 V, T j = 25 °C V DS = 500 V, V GS = 0 V, T j = 125 °C I DSS

-

-

10

0.1

100

1

μA

Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS

- 10 100

nA

Drain-Source on-resistance V GS = 10 V, I D = 8.5 A R DS(on)

- 0.3 0.4

?

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Dynamic Characteristics

Transconductance

V DS≥ 2 *I D * R DS(on)max, I D = 8.5 A g fs

8 15-

S

Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

- 2500 3325

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

- 320 480

Reverse transfer capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

- 120 180

Turn-on delay time

V DD = 30 V, V GS = 10 V, I D = 2.9 A R GS = 50 ?t d(on)

- 40 60

ns

Rise time

V DD = 30 V, V GS = 10 V, I D = 2.9 A R GS = 50 ?t r

- 100 150

Turn-off delay time

V DD = 30 V, V GS = 10 V, I D = 2.9 A R GS = 50 ?t d(off)

- 450 600

Fall time

V DD = 30 V, V GS = 10 V, I D = 2.9 A R GS = 50 ?t f

- 120 160

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Reverse Diode

Inverse diode continuous forward current T C = 25 °C I S

-- 13.5

A

Inverse diode direct current,pulsed T C = 25 °C I SM

-- 54

Inverse diode forward voltage V GS = 0 V, I F = 27 A V SD

- 1.1 1.6

V

Reverse recovery time

V R = 100 V, I F=l S, d i F/d t = 100 A/μs t rr

- 400-

ns

Reverse recovery charge

V R = 100 V, I F=l S, d i F/d t = 100 A/μs Q rr

- 6.2-

μC

Drain current I D = ?(T C )

parameter: V GS ≥ 10 V

20406080100120°C 160

T C

0 1 2 3 4 5 6 7 8

9 10 11 12

A 14 I D

Power dissipation P tot = ?(T C )

20406080100120°C 160

T

C

0 20 40 60 80 100 120 140 160

W 190 P tot

Safe operating area I D = ?(V DS )

parameter: D = 0.01, T C = 25°C

-1 10 0

10 1

10 2

10 A

I D

10

0 10

1

10

2

10

3

V V DS

R D S

(o n

) = V D S / I D

DC

10 ms

1 ms

100 μs

10 μs

t p = 6.8μs

Transient thermal impedance

Z th JC = ?(t p )

parameter: D = t p / T

10 10 10 10 Z thJC

10

10 10

10

10

10

10 10

s t p

Typ. output characteristics I D = ?(V DS )

parameter: t p = 80 μs

48121620V

28

V DS

I D

Typ. drain-source on-resistance R DS (on) = ?(I D )parameter: V GS

48121620A 28

I D

R DS (on)

Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 μs V DS ≥2 x I D x R DS(on)max

12345678V

10V

GS

0 1 2 3 4 5 6 7 8 9 10 11 12 13

A 15 I D

Typ. forward transconductance g fs = f (I D )

parameter: t p = 80 μs,V DS ≥2 x I D x R DS(on)max

246810A

14

I D

0 2 4 6 8 10 12 14 16 S

20 g fs

Gate threshold voltage V GS (th) = ?(T j )

parameter: V GS = V DS , I D = 1 mA

0.0 0.4

0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

V 4.6 V GS(th)

-60

-202060100°C 160

T

j

2% typ

98%

Drain-source on-resistance R DS (on) = ?(T j )

parameter: I D = 8.5 A, V GS = 10 V

-60

-202060100°C 160

T j

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ?

1.7

R DS (on)

typ

98%Typ. capacitances

C = f (V DS )

parameter:V GS = 0V, f = 1MHz

51015202530V

40

V DS

-2

10 -1

10 0

10 1

10 nF

C

C rss

C oss

C iss

Forward characteristics of reverse diode I F = ?(

V SD )

parameter: T j , t p = 80 μs

10 10 10 10 I F

0.0

0.40.8 1.2 1.6 2.0 2.4V 3.0

V SD

Avalanche energy E AS = ?(T j )parameter: I D = 13.5 A, V DD = 50 V R GS = 25 ?, L = 9.18 mH

20

406080100120°C 160T j

0 100 200 300

400 500 600 700 800 mJ

1000 E AS

Typ. gate charge V GS = ?(Q Gate )

parameter: I D puls = 20 A

20406080100120140160nC 190

Q Gate

0 2 4

6

8

10

12

V

16

V GS

DS max

V 0,8 DS max

V 0,2 Drain-source breakdown voltage V (BR)DSS = ?(T j )

-60

-202060100°C 160

T j

450 460

470 480 490 500 510 520 530 540 550 560 570

580

V 600 V (BR)DSS