Silicon PIN Diodes
? PIN diode for high speed switching of RF signals
? Low forward resistance ? Very low capacitance ? For frequencies up to 3 GHz
1
2
3
VPS05161
BAR 63BAR 63-06
BAR 63-04
BAR 63-05
EHA07005
13
2
EHA07006
13
2
EHA07004
13
2
13
EHA07002
Type Marking Pin Configuration
Package BAR 63 BAR 63-04 BAR 63-05 BAR 63-06
G3s G4s G5s G6s
1 = A
1 = A1 1 = A1 1 = C1
2 n.c. 2 = C2 2 = A2 2 = C2
3 = C
3=C1/A2 3=C1/C2 3=A1/A2
SOT-23
SOT-23 SOT-23 SOT-23
Maximum Ratings Parameter
Value Symbol Unit Diode reverse voltage V R 50V Forward current
I F mA 100250P tot mW Total power dissipation BAR 63, T S ≤ 80°C BAR 63-04, BAR 63-05, BAR 63-06, T S ≤ 55°C 250P tot Operating temperature range T op -55 ... 150°C
Storage temperature T stg
-55 (150)
Thermal Resistance Junction-ambient 1) BAR 63
R thJA ≤ 450K/W
Junction-ambient 1) BAR 63-04,05,06≤ 540R thJA Junction-soldering point BAR 63
R thJS ≤ 280Junction-soldering point BAR 63-04,05,06
R thJS
≤ 380
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Electrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol
Unit
Values max.typ.min.
DC characteristics V Breakdown voltage I (BR) = 5 μA V (BR)--50nA Reverse current V R = 20 V -50-I R V
Forward voltage I F = 100 mA V F
-
0.95
1.2
AC characteristics Diode capacitance V R = 0 V, f = 100 MHz V R = 5 V, f = 1 MHz C T
-0.3pF
0.30.21 -- --r f 2-?
1.21Forward resistance I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz -75-τrr Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA ns -
1.8
Series inductance
L s -
nH
Forward current I F = f (T A;T S) BAR 63
Forward current I F = f (T A;T S) BAR 63-04, -05, -06
Permissible pulse load R thJS = f (t p )BAR 63-04, -05, -06
Permissible pulse load R thJS = f (t p )BAR 63
Permissible pulse load I Fmax / I FDC = f (t p )BAR 63-04, -05, -06
Permissible pulse load I Fmax / I FDC = f (t p )
BAR 63
Diode capacitance C T = f (V R )f = 1MHz
R
Forward resistance r f = f (I F )f = 100MHz
F
10
mA 10
10
10
10
2
Forward current I F = f (V F )T A = Parameter