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BAR 63-06中文资料

BAR 63-06中文资料
BAR 63-06中文资料

Silicon PIN Diodes

? PIN diode for high speed switching of RF signals

? Low forward resistance ? Very low capacitance ? For frequencies up to 3 GHz

1

2

3

VPS05161

BAR 63BAR 63-06

BAR 63-04

BAR 63-05

EHA07005

13

2

EHA07006

13

2

EHA07004

13

2

13

EHA07002

Type Marking Pin Configuration

Package BAR 63 BAR 63-04 BAR 63-05 BAR 63-06

G3s G4s G5s G6s

1 = A

1 = A1 1 = A1 1 = C1

2 n.c. 2 = C2 2 = A2 2 = C2

3 = C

3=C1/A2 3=C1/C2 3=A1/A2

SOT-23

SOT-23 SOT-23 SOT-23

Maximum Ratings Parameter

Value Symbol Unit Diode reverse voltage V R 50V Forward current

I F mA 100250P tot mW Total power dissipation BAR 63, T S ≤ 80°C BAR 63-04, BAR 63-05, BAR 63-06, T S ≤ 55°C 250P tot Operating temperature range T op -55 ... 150°C

Storage temperature T stg

-55 (150)

Thermal Resistance Junction-ambient 1) BAR 63

R thJA ≤ 450K/W

Junction-ambient 1) BAR 63-04,05,06≤ 540R thJA Junction-soldering point BAR 63

R thJS ≤ 280Junction-soldering point BAR 63-04,05,06

R thJS

≤ 380

1) Package mounted on alumina 15mm x 16.7mm x 0.7mm

Electrical Characteristics at T A = 25°C, unless otherwise specified.Parameter Symbol

Unit

Values max.typ.min.

DC characteristics V Breakdown voltage I (BR) = 5 μA V (BR)--50nA Reverse current V R = 20 V -50-I R V

Forward voltage I F = 100 mA V F

-

0.95

1.2

AC characteristics Diode capacitance V R = 0 V, f = 100 MHz V R = 5 V, f = 1 MHz C T

-0.3pF

0.30.21 -- --r f 2-?

1.21Forward resistance I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz -75-τrr Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA ns -

1.8

Series inductance

L s -

nH

Forward current I F = f (T A;T S) BAR 63

Forward current I F = f (T A;T S) BAR 63-04, -05, -06

Permissible pulse load R thJS = f (t p )BAR 63-04, -05, -06

Permissible pulse load R thJS = f (t p )BAR 63

Permissible pulse load I Fmax / I FDC = f (t p )BAR 63-04, -05, -06

Permissible pulse load I Fmax / I FDC = f (t p )

BAR 63

Diode capacitance C T = f (V R )f = 1MHz

R

Forward resistance r f = f (I F )f = 100MHz

F

10

mA 10

10

10

10

2

Forward current I F = f (V F )T A = Parameter

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