1215&2921_150W
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1215
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2921
APPLICATIONS
·Audio and general purpose
PINNING(see Fig.2)
PIN DESCRIPTION 1 Base
2
Collector;connected to mounting base
3 Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT V CBO Collector-base voltage Open emitter -160 V V CEO Collector-emitter voltage Open base -160 V V EBO Emitter-base voltage Open collector -5 V I C Collector current -15 A I B
Base current
-4 A P C Collector power dissipation T C =25℃ 150 W T j Junction temperature 150 ℃ T stg
Storage temperature
-55~150
℃
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CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT
V CEO Collector-emitter breakdown voltage I C =-25mA ; I B =0 -160 V
V CEsat Collector-emitter saturation voltage I C =-5A ;I B =-0.5A -2.0 V
I CBO Collector cut-off current V CB =-160V; I E =0 -100 μA I EBO Emitter cut-off current V EB =-5V; I C =0 -100 μA h FE DC current gain I C =-5A ; V CE =-4V
50 180
C ob Output capacitance I E =0 ; V CB =-10V;f=1MHz 400 pF f T
Transition frequency
I C =-2A ; V CE =-12V
50
MHz
Switching times
t on Turn-on time 0.25 μs t s Storage time 0.85 μs t f
Fall time
I C =-5A;R L =12Ω I B1=-I B2=-0.5A V CC =-60V
0.20 μs
h FE classifications
O P Y 50-100 70-140 90-180
2
PACKAGE OUTLINE
Fig.2 outline dimensions
3
4
固电半
导体I N C H A
N G E S E M I C O
N D U C
T O R
Inchange Semiconductor Product Specification Silicon NPN Power Transistors2SC2921
DESCRIPTION
?With MT-200 package
?Complement to type 2SA1215
APPLICATIONS
?Audio and general purpose
PINNING(see Fig.2)
PIN DESCRIPTION
1Base
2 Collector;connected to mounting base
3 Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS
VALUE
UNIT V CBO Collector-base voltage Open emitter 160 V
V CEO Collector-emitter voltage Open base 160 V
V EBO Emitter-base voltage Open collector 5 V
I C Collector current 15 A
I B Base current 4 A
P C Collector power dissipation T C=25℃150 W
T j Junction
temperature 150 ℃T stg Storage
temperature -55~150 ℃
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固电
半
导体I N
C H A N G E S E M I C O N D
U C T O R 2
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT
V (BR)CEO Collector-emitter breakdown voltage I C =25mA ; I B =0 160 V
V CEsat Collector-emitter saturation voltage I C =5A ;I B =0.5A 2.0 V I CBO Collector cut-off current V CB =160V; I E =0 100
μA I EBO Emitter cut-off current V EB =5V; I C =0 100
μA h FE
DC current gain
I C =5A ; V CE =4V 50 C ob Output capacitance I E =0 ; V CB =10V;f=1MHz 200 pF
f T Transition frequency I E =-2A ; V CE =12V 60 MHz
Switching times
t on Turn-on time
0.20 μs t s Storage time 1.50 μs t f Fall time I C =5A;R L =12Ω
I B1=-I B2=0.5A V CC =60V
0.35 μs
h FE classifications
O P Y 50-100 70-140 90-180
固电
半
导体I N
C H A N G E S E M I C O N D
U C T O R 3
PACKAGE OUTLINE
固电
半
导体I N
C H A N G E S E M I C O N D
U C T O R
4